The SiC MIDSJT devices will be used to construct motor
GeneSiC Semiconductor Inc of Dulles, VA, USA, which develops silicon carbide (SiC) devices
Limited for high-temperature, high-power, and ultra-high-voltage applications, says that its project ‘Integrated SiC Super Junction Transistor-Diode Devices for high-power motor control modules operating at 500oC’ has been selected by the US National Aeronautics and Space Administration (NASA) for a Phase I SBIR award.
The SBIR project is focused on developing monolithic integrated SiC junction barrier Schottky (JBS) diode-Super Junction Transistor (MIDSJT) devices optimized for operation under Venus-like ambients (500oC surface temperatures).
The SiC MIDSJT devices will be used to construct motor control power modules for direct integration with Venus exploration rovers.
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