分类:
2010-08-08 16:00:52
文字符号 | 中文 | English |
IF(AV) | 正向平均电流(整流管) | mean foreard current (of diode) |
IT(AV) | 通态平均电流 | mean on-state current |
VRSM | 反向不重复峰值电压 | non-reetitive peak reverse voltage |
VRRM | 反向重复峰值电压 | repetitive peak reverse voltage |
VDSM | 断态不重复峰值电压 | non-repetitive peak off-state voltage |
VDRM | 断态重复峰值电压 | repetitive peak off-state voltage |
VFM | 正向峰值电压(整流管) | peak forward voltage (of diode) |
VTM | 通态峰值电压 | peak on-state voltage |
Tjm | 最高等效结温 | maximum virtual junction temperature |
F | 紧固力 | mounting force |
IRRM | 反向重复峰值电流 | repetitive peak reverse current |
IDRM | 断态重复峰值电流 | repetitive peak of-state current |
VGT | 门极触发电压 | gate trigger voltage |
IGT | 门极触发电流 | gate trigger current |
Rjc | 结壳热阻 | junction-case thermal resistance |
Qrr | 反向恢复电荷 | reverse recovery charge |
ITM | 通态峰值电流 | peak on-state current |
IFM | 正向峰值电流(整流管) | peak forward current (of diode) |
ITSM | 通态浪涌电流 | surge on-state current |
dv/dt | 断态电压临界上升率 | critical rate of rise of off-state voltage |
di/dt | 通态电流临界上升率 | critical rate of rise of on-state current |
tgt | 门极控制开通时间 | gate controlled turn-on time |
tq | 电路换向关断时间 | cricuit commutated turn-off time |
IRMS | 通态方均根电流 | R.M.S. on-state current |
(dv/dt)c | 换向电压临界上升率(双向晶闸管) | critical rate of rise of commutating voltage(of bi-directional thyristor) |
trr | 反向恢复时间(二极管的) | reverse recovery time (of diode) |
ton | 开通时间 | turn on time |
ts | 存储时间 | storage time |
tf | 下降时间 | fall time |